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BQ24103ARHLR Datasheet(PDF) 9 Page - Texas Instruments |
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BQ24103ARHLR Datasheet(HTML) 9 Page - Texas Instruments |
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9 / 45 page  bq24100, bq24103, bq24103A, bq24104, bq24105 bq24108, bq24109, bq24113, bq24113A, bq24115 www.ti.com SLUS606P – JUNE 2004 – REVISED NOVEMBER 2015 Electrical Characteristics (continued) TJ = 0°C to 125°C and recommended supply voltage range (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT KTTC Timer multiplier 2.6 min/nF CTTC Charge time capacitor range 0.01 0.22 μF VTTC_EN TTC enable threshold voltage V(TTC) rising 200 mV SLEEP COMPARATOR VCC ≤ VIBAT VCC ≤ VIBAT 2.3 V ≤ VI(OUT) ≤ VOREG, for 1 or 2 cells +5 mV +75 mV VSLP-ENT Sleep-mode entry threshold V VI(OUT) = 12.6 V, RIN = 1 kΩ VCC ≤ VIBAT VCC ≤ VIBAT bq24105/15 (1) -4 mV +73 mV VSLP-EXIT Sleep-mode exit hysteresis, 2.3 V ≤ VI(OUT)≤ VOREG 40 160 mV VCC decreasing below threshold, tFALL = 100 ns, 10-mV overdrive, 5 μs PMOS turns off tdg-SLP Deglitch time for sleep mode VCC decreasing below threshold, tFALL = 100 ns, 10-mV overdrive, 20 30 40 ms STATx pins turn off UVLO VUVLO-ON IC active threshold voltage VCC rising 3.15 3.30 3.50 V IC active hysteresis VCC falling 120 150 mV PWM 7 V ≤ VCC ≤ VCC(max) 400 Internal P-channel MOSFET on-resistance 4.5 V ≤ VCC ≤ 7 V 500 m Ω 7 V ≤ VCC ≤ VCC(max) 130 Internal N-channel MOSFET on-resistance 4.5 V ≤ VCC ≤ 7 V 150 fOSC Oscillator frequency 1.1 MHz Frequency accuracy –9% 9% DMAX Maximum duty cycle 100% DMIN Minimum duty cycle 0% tTOD Switching delay time (turn on) 20 ns tsyncmin Minimum synchronous FET on time 60 ns Synchronous FET minimum current-off 50 400 mA threshold (2) BATTERY DETECTION Battery detection current during time-out IDETECT VI(BAT) < VOREG – VRCH 2 mA fault IDISCHRG1 Discharge current VSHORT < VI(BAT) < VOREG – VRCH 400 μA tDISCHRG1 Discharge time VSHORT < VI(BAT) < VOREG – VRCH 1 s IWAKE Wake current VSHORT < VI(BAT) < VOREG – VRCH 2 mA tWAKE Wake time VSHORT < VI(BAT) < VOREG – VRCH 0.5 s Begins after termination detected, IDISCHRG2 Termination discharge current 400 μA VI(BAT) ≤ VOREG tDISCHRG2 Termination time 262 ms OUTPUT CAPACITOR Required output ceramic capacitor range COUT from SNS to PGND, between inductor and 4.7 10 47 μF RSNS Required SNS capacitor (ceramic) at SNS CSNS 0.1 μF pin PROTECTION Threshold over VOREG to turn off P-channel VOVP OVP threshold voltage MOSFET, STAT1, and STAT2 during charge 110 117 121 %VO(REG) or termination states ILIMIT Cycle-by-cycle current limit 2.6 3.6 4.5 A VSHORT Short-circuit voltage threshold, BAT VI(BAT) falling 1.95 2 2.05 V/cell (1) For bq24105 and bq24115 only. RIN is connected between IN and PGND pins and needed to ensure sleep entry. (2) N-channel always turns on for approximately 60 ns and then turns off if current is too low. Copyright © 2004–2015, Texas Instruments Incorporated Submit Documentation Feedback 9 Product Folder Links: bq24100 bq24103 bq24103A bq24104 bq24105 bq24108 bq24109 bq24113 bq24113A bq24115 |
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