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IL1205AT Datasheet(PDF) 2 Page - Vishay Siliconix |
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IL1205AT Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83549 302 Rev. 1.7, 08-May-08 IL1205AT/1206AT/1207AT/1208AT Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection in SOIC-8 Package, 110 °C Rated Notes (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SOP/SOIC). Fig. 1 - Input Power Dissipation (LED) vs. Ambient Temperature Fig. 2 - Output Power Dissipation vs. Ambient Temperature Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. COUPLER Isolation test voltage VISO 4000 VRMS Operating temperature Tamb - 55 to + 110 °C Total package dissipation (LED and detector) Ptot 240 mW Storage temperature Tstg - 55 to + 150 °C Soldering temperature (2) max. 10 s, dip soldering distance to seating plane ≥ 1.5 mm Tsld 260 °C Derate linearly from 25 °C 2.4 mW/°C ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT 010 20 30 4050 60 70 80 90 100 110 120 0 10 20 30 40 50 60 70 80 90 100 Tamb (°C) 0 10 20 30 40 50 60 70 80 90 100110 120 0 10 20 30 40 50 60 70 80 90 100 Tamb (°C) 110 120 130 140 150 160 ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.3 1.5 V Reverse current VR = 6 V IR 0.1 100 µA Capacitance VR = 0 V CI 13 pF OUTPUT Collector emitter leakage current VCE = 10 V ICEO 5.0 50 nA Collector emitter breakdown voltage IC = 100 µA BVCEO 70 V Emitter collector breakdown voltage IE = 100 µA BVECO 7.0 10 V Collector base breakdown current BVCBO 70 V Saturation voltage, collector emitter IC = 2 mA, IF = 10 mA VCEsat 0.4 V COUPLER DC current transfer ratio IF = 10 mA, VCE = 5.0 V IL1205AT CTR 40 80 % IL1206AT CTR 63 125 % IL1207AT CTR 100 200 % IL1208AT CTR 100 320 % IF = 1.0 mA, VCE = 5.0 V IL1205AT CTR 13 25 % IL1206AT CTR 22 40 % IL1207AT CTR 34 60 % IL1208AT CTR 56 95 % Capacitance (input to output) CIO 0.5 pF |
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