SFH690AB, SFH690A, SFH690B, SFH690C, SFH690D

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Vishay Semiconductors

Rev. 2.6, 17-Nov-15

2

Document Number: 83686

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Fig. 1 - Permissible Power Dissipation vs. Ambient Temperature

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

6V

DC forward current

50

mA

Surge forward current

≤ 10 μs

2.5

A

Power dissipation

80

mW

OUTPUT

Collector emitter voltage

70

V

Emitter collector voltage

7V

Collector current

50

mA

≤ 1 ms

100

mA

Power dissipation

150

mW

COUPLER

Isolation resistance

Ω

Ω

Storage temperature range

- 55 to + 150

°C

Ambient temperature range

- 55 to + 100

°C

max. 10 s dip soldering distance to

seating plane

≥ 1.5 mm

260

°C

0

50

100

150

200

0

255075

100

125

150

18484

Phototransistor

Diode