NTHD4N02FT1 datasheet(3/6 Pages) ONSEMI

Part #	NTHD4N02FT1

Description	Power MOSFET and Schottky Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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NTHD4N02F

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TYPICAL MOSFET PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

2 V

100

°C

0

8

5

6

3

2

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

4

2

0

1

Figure 1. On−Region Characteristics

0

8

2

1.5

2.5

6

4

2

1

0

3

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

35

0.1

0.05

0

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

17

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (AMPS)

−50

0

−25

25

1.5

1.3

1.1

0.9

0.7

50

125

100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

0.15

24

TC = −55°C

ID = 2.9 A

TJ = 25°C

0.1

0.04

75

150

TJ = 25°C

ID = 2.9 A

VGS = 4.5 V

4

25

°C

1.7

VGS = 4.5 V

16

24

8

1

20

16

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

12

VGS = 0 V

TJ = 100°C

1.4 V

1.6 V

1.8 V

VGS = 2.5 V

10

100

78

2.2 V

VDS ≥ 10 V

35

0.07

610

18

14

VGS = 2.4 V

VGS = 5 V to 3 V

910

0.5

0

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