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PI49FCT32805H Datasheet(PDF) 2 Page - Pericom Semiconductor Corporation |
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PI49FCT32805H Datasheet(HTML) 2 Page - Pericom Semiconductor Corporation |
2 / 7 page 2 PS8494 08/09/00 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 12345678901234567890123456789012123456789012345678901234567890121234567890123456789012345678901212345678901234567890123456789012123456789012 PI49FCT32805 3.3V, 2 x 1:5 CMOS Clock Driver Storage Temperature ............................................................65°Cto+150°C Ambient Temperature with Power Applied ........................... 40°Cto+85°C Supply Voltage to Ground Potential (Inputs & Vcc Only) ......0.5Vto+4.6V Supply Voltage to Ground Potential (Outputs & I/O Only) .... 0.5Vto+4.6V DC Input Voltage ....................................................................0.5Vto+4.6V DC Output Current ............................................................................. 120mA Power Dissipation ................................................................................. 0.5W Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indi- cated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Maximum Ratings - (Above which the useful life may be impaired. For user guidelines, not tested.) Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 3.3V, +25°C ambient and maximum loading. 3. VOH = VCC 0.6V at rated current. 4. This parameter is determined by device characterization but is not production tested. 5. Not more than one output should be shorted at one time. Duration of the test should not exceed one second. OperatingRangeAmbientTemperature=40°Cto+85°C,Vcc=3.3V±0.3V l o b m y Sn o it p i r c s e Ds n o it i d n o C t s e T ) 1 ( . n i M. p y T ) 2 ( . x a Ms ti n U V H O e g a tl o v h g i h t u p t u O V C C V 0 . 3 = V N I V = L I V r o H I I H O A m 8 =4 . 2 ) 3 ( 0 . 3 V V L O e g a tl o v w o l t u p t u O V C C V 0 . 3 = V N I V = L I V r o H I I L O A m 2 1 = 4 . 05 . 0 V H I e g a tl o v h g i h t u p n Ici g o l W O L 0 . 2 V C C 2 . 0 - V L I e g a tl o v w o l t u p n Ici g o l H G I H 5 . 0 8 . 0 I H I t n e rr u c h g i h t u p n IV C C V ,. x a m = N I V = C C 1 µA I L I t n e rr u c w o l t u p n IV C C V ,. x a m = N I D N G = 1 I H Z O I L Z O e c n a d e p m i h g i H t n e rr u c t u p t u o V C C ll a , x a m = d el b a si d st u p t u o V T U O V = C C V T U O D N G = 1 1 V K I e g a tl o v e d o i d p m al CV C C I ,. n i m = N I A m 8 1 = 9 . 0 2 . 1 V I H O H G I H t u p t u O ) 4 ( t n e rr u cV T U O V , V 5 . 1 = N I V = L I V r o H I V C C V 3 . 3 = 5 2 5 5 0 8 A m I L O W O L t u p t u O ) 4 ( t n e rr u cV T U O V , V 5 . 1 = N I V = L I V r o H I V C C V 3 . 3 = 5 25 40 9 I s o ti u c ri c tr o h S ) 5 ( t n e rr u cV C C . x a m = V T U O D N G = 0 5 0 0 1 0 8 1 s Rr o t si s e r s ei r e s l a n r e t n I 2 2m h O DC Electrical Characteristics (Over the Operating Range) Note: 1.This parameter is determined by device characterization but is not production tested. Parameters(1) Description TestConditions Typ Max. Units CIN Input Capacitance VIN=0V 3.0 4 pF COUT Output Capacitance VOUT=0V 6 pF Capacitance(TA=25°C,f=1MHz) |
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