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STD6N60M2 Datasheet(PDF) 4 Page - STMicroelectronics |
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STD6N60M2 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 21 page Electrical characteristics STB6N60M2, STD6N60M2 4/21 DocID024772 Rev 3 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V 1 µA VDS = 600 V, TC=125 °C (1) 1. Defined by design, not subject to production test 100 µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 2.25 A 1.06 1.2 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 -232 - pF Coss Output capacitance - 14 - pF Crss Reverse transfer capacitance -0.7 - pF Coss eq.(1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 71 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6.5 - Ω Qg Total gate charge VDD = 480 V, ID = 4.5 A, VGS = 10 V (see Figure 16) -8.2 - nC Qgs Gate-source charge - 1.7 - nC Qgd Gate-drain charge - 4.2 - nC Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 300 V, ID = 1.65 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15 and Figure 20) -9.5 - ns tr Rise time - 7.4 - ns td(off) Turn-off delay time - 24 - ns tf Fall time - 22.5 - ns |
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