Electrical characteristics

STB6N60M2, STD6N60M2

4/21

DocID024772 Rev 3

2

Electrical characteristics

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Drain-source

breakdown voltage

600

V

Zero gate voltage

1

µA

(1)

1.

Defined by design, not subject to production test

100

µA

Gate-body leakage

±10

µA

2

3

4

V

Static drain-source

on-resistance

1.06

1.2

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Input capacitance

-232

-

pF

Output capacitance

-

14

-

pF

Reverse transfer

capacitance

-0.7

-

pF

Coss eq.(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS

Equivalent output

capacitance

-

71

-

pF

Intrinsic gate

resistance

f = 1 MHz open drain

-

6.5

-

Ω

Total gate charge

(see Figure 16)

-8.2

-

nC

Gate-source charge

-

1.7

-

nC

Gate-drain charge

-

4.2

-

nC

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Turn-on delay time

(see Figure 15 and Figure 20)

-9.5

-

ns

Rise time

-

7.4

-

ns

Turn-off delay time

-

24

-

ns

Fall time

-

22.5

-

ns