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STF26NM60ND Datasheet(PDF) 1 Page - STMicroelectronics

Part # STF26NM60ND
Description  Low input capacitance and gate charge
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF26NM60ND Datasheet(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
November 2013
DocID025283 Rev 1
1/23
STB26NM60ND, STF26NM60ND,
STP26NM60ND, STW26NM60ND
N-channel 600 V, 0.145
Ω typ., 21 A, FDmesh™ II Power MOSFETs
in D²PAK, TO-220FP, TO-220 and TO-247 packages
Datasheet
- production data
Figure 1. Internal schematic diagram
Features
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
• Extremely high dv/dt and avalanche
capabilities
Applications
• Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary devices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topologies and ZVS phase-shift converters.
TO-220
D PAK
2
TO-220FP
TO-247
1
2
3
1
2
3
1
3
TAB
1
2
3
TAB
Order codes
VDS @ Tjmax
RDS(on) max
ID
STB26NM60ND
650 V
0.175
21 A
STF26NM60ND
STP26NM60ND
STW26NM60ND
Table 1. Device summary
Order codes
Marking
Packages
Packaging
STB26NM60ND
26NM60ND
D²PAK
Tape and reel
STF26NM60ND
TO-220FP
Tube
STP26NM60ND
TO-220
STW26NM60ND
TO-247
www.st.com


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