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PSMN009-100B Datasheet(PDF) 6 Page - NXP Semiconductors |
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PSMN009-100B Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page Philips Semiconductors PSMN009-100P/100B N-channel enhancement mode field-effect transistor Product data Rev. 01 — 29 April 2002 6 of 13 9397 750 09158 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. Tj =25 °CTj =25 °C and 175 °C; VDS >ID x RDSon Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values. Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Tj =25 °C Fig 7. Drain-source on-state resistance as a function of drain current; typical values. Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. 03ai02 0 50 100 150 200 250 0 0.5 1 1.5 2 VDS (V) ID (A) 20 V Tj = 25 °C VGS = 4.5 V 5 V 8 V 6 V 10 V 5.5 V 03ai04 0 20 40 60 80 100 012 3456 VGS (V) ID (V) VDS > ID x RDSon Tj =175 °C 25 °C 03ai03 0.005 0.01 0.015 0.02 0 50 100 150 200 250 ID (A) RDSon ( Ω) VGS = 20 V Tj = 25 °C 10 V 8 V 5.5 V 6 V 5 V 03aa29 0 0.5 1 1.5 2 2.5 3 -60 060 120 180 Tj ( oC) a a R DSon R DSon 25 C ° () ----------------------------- = |
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