Philips Semiconductors

PSMN009-100P/100B

N-channel enhancement mode field-effect transistor

Product data

Rev. 01 — 29 April 2002

6 of 13

9397 750 09158

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03ai02

0

50

100

150

200

250

0

0.5

1

1.5

2

VDS (V)

ID

(A)

20 V

Tj = 25 °C

VGS = 4.5 V

5 V

8 V

6 V

10 V

5.5 V

03ai04

0

20

40

60

80

100

012

3456

VGS (V)

ID

(V)

VDS > ID x RDSon

Tj =175 °C

25

°C

03ai03

0.005

0.01

0.015

0.02

0

50

100

150

200

250

ID (A)

RDSon

(

Ω)

VGS = 20 V

Tj = 25 °C

10 V

8 V

5.5 V

6 V

5 V

03aa29

0

0.5

1

1.5

2

2.5

3

-60

060

120

180

Tj (

a

a

R

DSon

R

DSon 25 C

°

()

-----------------------------

=