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STU7N60M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STU7N60M2 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 21 page This is information on a product in full production. June 2013 DocID024622 Rev 1 1/21 STD7N60M2, STP7N60M2, STU7N60M2 N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus™ low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. TO-220 1 2 3 TAB 1 3 TAB DPAK 3 2 1 TAB IPAK AM15572v1 , TAB Order codes VDS @ TJmax RDS(on) max ID STD7N60M2 650 V 0.95 Ω 5 A STP7N60M2 STU7N60M2 Table 1. Device summary Order codes Marking Package Packaging STD7N60M2 7N60M2 DPAK Tape and reel STP7N60M2 TO-220 Tube STU7N60M2 IPAK www.st.com |
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