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STD9N40M2 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD9N40M2 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 16 page This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. June 2014 DocID025752 Rev 2 1/16 STD9N40M2 N-channel 400 V, 0.59 Ω typ., 6 A MDmesh II Plus™ low Q g Power MOSFET in a DPAK package Datasheet - preliminary data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Lower R DS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Q g . This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 1 3 TAB DPAK AM15572v1 , TAB Order code VDS @ TJmax RDS(on) max ID STD9N40M2 450 V 0.8 Ω 6 A Table 1. Device summary Order code Marking Package Packaging STD9N40M2 9N40M2 DPAK Tape and reel www.st.com |
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