STD40P3LLH6 datasheet(4/16 Pages) STMICROELECTRONICS

Part #	STD40P3LLH6

Description	P-channel -30 V, 12 m廓 typ., -40 A STripFET??H6 Power MOSFET in a DPAK package

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Electrical characteristics

STD40P3LLH6

4/16

DocID025821 Rev 4

2

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0, ID = -1 mA

-30

V

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = -30 V

-1

µA

VGS = 0, VDS = -30 V,

TC = 125 °C (1)

-10

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 20 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = -250 µA

-1

-2.5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = -20 A

12

15

mΩ

VGS = -4.5 V, ID = -20 A

18

22.5

mΩ

Notes:

(1)Defined by design, not subject to production test.

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = -25 V, f = 1 MHz,

VGS = 0

-

2615

-

pF

Coss

Output capacitance

-

340

-

pF

Crss

Reverse transfer capacitance

-

235

-

pF

Qg

Total gate charge

VDD = -15 V, ID = -40 A,

VGS = -4.5 V (see Figure

14: "Gate charge test

circuit")

-

24

-

nC

Qgs

Gate-source charge

-

9

-

nC

Qgd

Gate-drain charge

-

8

-

nC

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = -15 V, ID = -20 A,

RG

= 4.7 Ω, VGS = -10 V

(see Figure 13: "Switching

times test circuit for resistive

load")

-

13.2

-

ns

tr

Rise time

-

93

-

ns

td(off)

Turn-off delay time

-

50

-

ns

tf

Fall time

-

18

-

ns

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