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STFILED656 Datasheet(PDF) 4 Page - STMicroelectronics |
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STFILED656 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 22 page Electrical characteristics STDLED656, STFILED656, STPLED656, STULED656 4/22 DocID024429 Rev 1 2 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 650 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 650 V VDS = 650 V, TC=125 °C 0.8 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V; VDS=0 ±9 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.6 4.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2.7 A 1.1 1.3 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 895 67 12.5 - pF pF pF Coss eq. (1) 1. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance energy related VDS = 0 to 520 V, VGS = 0 - 27 - pF Rg Gate input resistance f=1 MHz open drain - 3.5 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 500 V, ID = 5.4 A, VGS = 10 V (see Figure 17) - 34 4 21 - nC nC nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 325 V, ID = 2.7 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) - 14 10 44 24 - ns ns ns ns Obsolete Product(s) - Obsolete Product(s) |
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