STF10N105K5, STP10N105K5, STW10N105K5

Electrical characteristics

DocID026932 Rev 2

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Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Source-drain current

-

6

A

(1)

Source-drain current (pulsed)

24

A

(2)

Forward on voltage

1.5

V

Reverse recovery time

345

ns

Reverse recovery charge

3.53

µC

Reverse recovery current

20.5

A

Reverse recovery time

540

ns

Reverse recovery charge

5.05

µC

Reverse recovery current

18.5

A

Notes:

(1)

Pulse width limited by safe operating area.

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Table 8: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Gate-source breakdown voltage

30

-

-

V

The built-in back-to-back Zener diodes have been specifically designed to enhance the

ESD capability of the device. The Zener voltage is appropriate for efficient and cost-

effective intervention to protect the device integrity. These integrated Zener diodes thus

eliminate the need for external components.