STF13N65M2 datasheet(4/15 Pages) STMICROELECTRONICS

Part #	STF13N65M2

Description	Zener-protected

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Electrical characteristics

STF13N65M2,STFI13N65M2

4/15

DocID026893 Rev 2

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0 V

650

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 650 V

1

µA

VDS = 650 V, TC = 125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS =± 25 V

±10

µA

VGS(th)

Gate threshold voltage VDS =VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source

on-resistance

VGS =10 V, ID = 5 A

0.37

0.43

Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS =0 V

-590

-

pF

Coss

Output capacitance

-

27.5

-

pF

Crss

Reverse transfer

capacitance

-1.1

-

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VDS =0 to 520 V, VGS = 0 V

-

168.5

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

6.5

-

Ω

Qg

Total gate charge

VDD = 520 V, ID =10A,

VGS =10 V, (see Figure 15)

-17

-

nC

Qgs

Gate-source charge

-

3.3

-

nC

Qgd

Gate-drain charge

-

7

-

nC

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD =325 V, ID = 5 A,

RG =4.7 Ω, VGS =10V

(see Figure 14 and Figure 19)

-11

-

ns

tr

Rise time

-

7.8

-

ns

td(off)

Turn-off delay time

-

38

-

ns

tf

Fall time

-

12

-

ns

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