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STF13N65M2 Datasheet(PDF) 4 Page - STMicroelectronics |
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STF13N65M2 Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STF13N65M2,STFI13N65M2 4/15 DocID026893 Rev 2 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 V 650 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 650 V 1 µA VDS = 650 V, TC = 125 °C 100 µA IGSS Gate-body leakage current (VDS = 0) VGS =± 25 V ±10 µA VGS(th) Gate threshold voltage VDS =VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS =10 V, ID = 5 A 0.37 0.43 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS =0 V -590 - pF Coss Output capacitance - 27.5 - pF Crss Reverse transfer capacitance -1.1 - pF Coss eq. (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VDS =0 to 520 V, VGS = 0 V - 168.5 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 6.5 - Ω Qg Total gate charge VDD = 520 V, ID =10A, VGS =10 V, (see Figure 15) -17 - nC Qgs Gate-source charge - 3.3 - nC Qgd Gate-drain charge - 7 - nC Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD =325 V, ID = 5 A, RG =4.7 Ω, VGS =10V (see Figure 14 and Figure 19) -11 - ns tr Rise time - 7.8 - ns td(off) Turn-off delay time - 38 - ns tf Fall time - 12 - ns |
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