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STF100N6F7 Datasheet(PDF) 3 Page - STMicroelectronics |
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STF100N6F7 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 13 page DocID027211 Rev 3 3/13 STF100N6F7 Electrical ratings 13 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 60 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 46(1) 1. Limited by package A ID Drain current (continuous) at TC = 100 °C 33(1) A IDM (2) 2. Pulse width is limited by safe operating area Drain current (pulsed) 184 A PTOT Total dissipation at TC = 25 °C 25 W EAS (3) 3. Starting TJ = 25 °C, ID = 20 A, VDD = 30 V Single pulse avalanche energy 200 mJ dV/dt(4) 4. ISD= 46 A; di/dt = 600 A/µs; VDD = 48 V; Tj < Tjmax Drain-body diode dynamic dV/dt ruggedness 6 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC= 25 °C) 2500 V Tj Operating junction temperature -55 to 175 °C Tstg Storage temperature Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 6 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 °C/W |
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