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RN1303 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN1303 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page RN1301~RN1306 2001-06-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1301,RN1302,RN1303 RN1304,RN1305,RN1306 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2301~RN2306 Equivalent Circuit and Bias Resistor Values Maximum Ratings (Ta = 25 °°°°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage RN1301~1306 VCEO 50 V RN1301~1304 10 Emitter-base voltage RN1305, 1306 VEBO 5 V Collector current Ic 100 mA Collector power dissipation Pc 100 mW Junction temperature Tj 150 °C Storage temperature range RN1301~1306 Tstg −55~150 °C JEDEC ― EIAJ SC-70 TOSHIBA 2-2E1A Weight: 0.006g Unit: mm Type No. R1 (kΩ)R2 (kΩ) RN1301 4.7 4.7 RN1302 10 10 RN1303 22 22 RN1304 47 47 RN1305 2.2 47 RN1306 4.7 47 |
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