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RN1227 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN1227 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 8 page RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227 2001-06-07 1 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1221,RN1222,RN1223,RN1224 RN1225,RN1226,RN1227 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l High current type (IC(MAX) = 800mA) l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Low VCE (sat) l Complementary to RN2221~2227 Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage RN1221~1227 VCEO 50 V RN1221~1224 10 RN1225, 1226 5 Emitter-base voltage RN1227 VEBO 6 V Collector current Ic 800 mA Collector power dissipation Pc 300 mW Junction temperature Tj 150 °C Storage temperature range RN1221~1227 Tstg −55~150 °C JEDEC ― EIAJ ― TOSHIBA 2-4E1A Weight: 0.13g Unit: mm Type No. R1 (kΩ)R2 (kΩ) RN1221 1 1 RN1222 2.2 2.2 RN1223 4.7 4.7 RN1224 10 10 RN1225 0.47 10 RN1226 1 10 RN1227 2.2 10 |
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Similar Description - RN1227 |
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