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RN2505 Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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RN2505 Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page RN2501~RN2506 2001-06-07 1 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2501,RN2502,RN2503 RN2504,RN2505,RN2506 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in SMV (super mini type with 5 leads) l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1501~RN1506 Equivalent Circuit and Bias Resistor Values Equivalent Circuit (Top View) Maximum Ratings (Ta = 25 °°°°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage RN2501~2506 VCEO −50 V RN2501~2504 −10 Emitter base voltage RN2505, 2506 VEBO −5 V Collector current IC −100 mA Collector power dissipation PC* 300 mW Junction temperature Tj 150 °C Storage temperature range RN2501~2506 Tstg −55~150 °C * Total rating JEDEC ― EIAJ ― TOSHIBA 2-3L1A Weight: 0.014g Type No. R1 (kΩ)R2 (kΩ) RN2501 4.7 4.7 RN2502 10 10 RN2503 22 22 RN2504 47 47 RN2505 2.2 47 RN2506 4.7 47 Unit: mm |
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