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BQ27210 Datasheet(PDF) 3 Page - Texas Instruments |
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BQ27210 Datasheet(HTML) 3 Page - Texas Instruments |
3 / 35 page www.ti.com RECOMMENDED OPERATING CONDITIONS ELECTRICAL CHARACTERISTICS bq27010, bq27210 SLUS707B – APRIL 2006 – REVISED JANUARY 2007 MIN MAX UNIT VCC Supply voltage 2.6 4.5 V TA Operating free-air temperature –20 70 °C Input voltage, SRP and SRN with respect to VSS –100 100 mV over operating free-air temperature range and supply voltage range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT GENERAL ICC(VCC) Active current 52 90 ICC(SLP) Sleep current VBAT = VCC 1.0 2.5 µA ICC(SHP) Ship current (bq27010 only) 0.9 2.0 ICC(POR) Hibernate current 0 < VCC < 1.5 V 0.6 1.5 RBI pin only, VCC < RBI current < 1 20 nA VCC(POR) V(POR) POR threshold 2.0 2.6 V Input impedance BAT, SRN, SRP 10 M Ω Pull-down current HDQ, SCL, SDA 2.7 4.5 µA HDQ, SCL, SDA and GPIO VCC < 4.2 V 1.5 VIH High-level input voltage VCC > 4.2 V 1.7 VIL Low-level input voltage 0.7 V Low-level output voltage (GPIO) IOL = 1 mA 0.4 VOL Low-level output voltage (HDQ, SCL, SDA) IOL = 2 mA 0.4 VOLTAGE AND TEMPERATURE MEASUREMENT Measurement range VCC = V(BAT) 2.6 4.5 V Reported voltage resolution 2.7 mV Reported accuacy -25 25 Voltage update time 2.56 s Reported temperature resolution 0.25 °K Reported temperature accuracy -3 3 Temperature update time 2.56 s TIME, CURRENT AND CAPACITY (3.0 V ≤ V CC≤ 4.2 V, 0°C ≤ TA≤ 50°C) fOSC Internal oscillator frequency -2.2% 1.5% Current gain variability -0.5% 0.5% Coulometric gain variability -1.7% 0.5% Coulomb counter input offset(1) -15 0 15 µV VSRP-VSRN differential input –100 100 mV EEPROM PROGRAMMING ( VCC≥ 3.0 V, -20°C ≤ TA≤ 35°C)(2) Programming voltage rise time 0.5 1.5 ms Programming voltage high time 10 100 ms Programming voltage fall time 0.5 1.5 ms Programming voltage Applied to PGM pin 20 22 V EEPROM programming current VPROGRAM = 21 V 15 mA (1) Excludes contributions to the offset due to PCB layout or other factors external to the bq27010/bq27210. (2) Maximum number of programming cycles on the EEPROM is 10 and data retention time is 10 years at TA = 85°C. 3 Submit Documentation Feedback |
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