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INA231AIYFFT Datasheet(PDF) 2 Page - Texas Instruments |
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INA231AIYFFT Datasheet(HTML) 2 Page - Texas Instruments |
2 / 37 page INA231 SBOS644 – FEBRUARY 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE INFORMATION(1) PRODUCT PACKAGE-LEAD PACKAGE DESIGNATOR PACKAGE MARKING INA231 WCSP-12 YFF INA231 (1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the INA231 product folder at www.ti.com. ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range (unless otherwise noted). INA231 UNIT Supply voltage, VS 6 V Differential (VIN+) – (VIN–) (2) –30 to +30 V Analog inputs, IN+, IN– Common-mode –0.3 to +30 V SDA GND – 0.3 to +6 V SCL GND – 0.3 to VS + 0.3 V Input current into any pin 5 mA Open-drain digital output current 10 mA Storage temperature –65 to +150 °C Junction temperature +150 °C Human body model (HBM) 2500 V Electrostatic discharge Charged-device model (CDM) 1000 V (ESD) ratings Machine model (MM) 150 V (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) VIN+ and VIN– may have a differential voltage of –30 V to +30 V; however, the voltage at these pins must not exceed the range –0.3 V to +30 V. 2 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: INA231 |
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