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STP17N62K3 Datasheet(PDF) 8 Page - STMicroelectronics

Part # STP17N62K3
Description  Very low intrinsic capacitance
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP17N62K3 Datasheet(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STF17N62K3, STP17N62K3, STW17N62K3
8/17
Doc ID 15046 Rev 2
Figure 14.
Normalized gate threshold voltage
vs temperature
Figure 15.
Normalized on resistance vs
temperature
Figure 16.
Source-drain diode forward
characteristics
Figure 17.
Normalized BVDSS vs temperature
Figure 18.
Maximum avalanche energy vs
starting Tj
VGS(th)
0.8
0.7
0.6
0.5
-75
TJ(°C)
(norm)
-25
0.9
75
25
125
1.0
1.1
ID=100µA
AM10350v1
RDS(on)
2.0
1.5
1.0
0.5
-75
TJ(°C)
(norm)
-25
75
25
125
2.5
0
ID=7.5A
VGS=10V
AM10351v1
VSD
0
4
ISD(A)
(V)
2
10
6
8
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ=-50°C
TJ=150°C
TJ=25°C
1.1
12
AM10353v1
BVDSS
-75
TJ(°C)
(norm)
-25
75
25
125
0.80
0.85
0.90
0.95
1.00
1.05
1.10
ID=1mA
AM10352v1
EAS
0
40
TJ(°C)
(mJ)
20
100
60
80
0
40
80
120 140
120
160
200
240
ID=15.5 A
VDD=50 V
280
AM10354v1


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