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SN65HVD3088EDR Datasheet(PDF) 4 Page - Texas Instruments |
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SN65HVD3088EDR Datasheet(HTML) 4 Page - Texas Instruments |
4 / 36 page 4 SN65HVD3082E, SN75HVD3082E, SN65HVD3085E, SN65HVD3088E SLLS562I – AUGUST 2009 – REVISED SEPTEMBER 2016 www.ti.com Product Folder Links: SN65HVD3082E SN75HVD3082E SN65HVD3085E SN65HVD3088E Submit Documentation Feedback Copyright © 2009–2016, Texas Instruments Incorporated (1) The algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet. 6.3 Recommended Operating Conditions over operating free-air temperature range unless otherwise noted (1) MIN NOM MAX UNIT Supply voltage, VCC 4.5 5.5 V Voltage at any bus terminal (separately or common mode) , VI –7 12 High-level input voltage (D, DE, or RE inputs), VIH 2 VCC V Low-level input voltage (D, DE, or RE inputs), VIL 0 0.8 V Differential input voltage, VID –12 12 V Output current, IO Driver –60 60 mA Receiver –8 8 Differential load resistance, RL 54 60 Ω Signaling rate, 1/tUI SN65HVD3082E, SN75HVD3082E 0.2 Mbps SN65HVD3085E 1 SN65HVD3088E 20 Operating free-air temperature, TA SN65HVD3082E (D package) –40 105 °C SN65HVD3082E (DGK and P packages), SN65HVD3085E, SN65HVD3088E –40 85 SN75HVD3082E 0 70 Junction temperature, TJ –40 130 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) SN65HVD3082E, SN75HVD3082E, SN65HVD3085E, SN65HVD3088E SN65HVD3082E, SN65HVD3088E UNIT D (SOIC) DGK (VSSOP) P (PDIP) 8 PINS 8 PINS 8 PINS RθJA Junction-to-ambient thermal resistance 130 180 70 °C/W RθJC(top) Junction-to-case (top) thermal resistance 80 66 80 °C/W RθJB Junction-to-board thermal resistance 55 110 40 °C/W ψJT Junction-to-top characterization parameter 7.9 4.6 17.6 °C/W ψJB Junction-to-board characterization parameter 47 73.1 28.3 °C/W |
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