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SM16JZ51 Datasheet(PDF) 2 Page - Toshiba Semiconductor |
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SM16JZ51 Datasheet(HTML) 2 Page - Toshiba Semiconductor |
2 / 5 page SM16GZ51,SM16JZ51 2001-07-10 2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Repetitive Peak Off−State Current IDRM VDRM = Rated ― ― 20 µA I T2 (+) , Gate (+) ― ― 1.5 II T2 (+) , Gate (−) ― ― 1.5 III T2 (−) , Gate (−) ― ― 1.5 Gate Trigger Voltage IV VGT VD = 12 V, RL = 20 Ω T2 (−) , Gate (+) ― ― ― V I T2 (+) , Gate (+) ― ― 30 II T2 (+) , Gate (−) ― ― 30 III T2 (−) , Gate (−) ― ― 30 Gate Trigger Current IV IGT VD = 12 V, RL = 20 Ω T2 (−) , Gate (+) ― ― ― mA Peak On−State Voltage VTM ITM = 25 A ― ― 1.5 V Gate Non−Trigger Voltage VGD VD = Rated, Tc = 125°C 0.2 ― ― V Holding Current IH VD = 12 V, ITM = 1 A ― ― 50 mA Thermal Resistance Rth (j−c) Junction to Case, AC ― ― 1.8 °C / W Critical Rate of Rise of Off−State Voltage dv / dt VDRM = Rated, Tj = 125°C Exponential Rise ― 300 ― V / µs Critical Rate of Rise of Off−State Voltage at Commutation (dv / dt) c VDRM = 400 V, Tj = 125°C (di / dt) c = −8.7 A / ms 10 ― ― V / µs MARKING *NUMBER SYMBOL MARK M16GZ51 SM16GZ51 *1 TYPE M16JZ51 SM16JZ51 *2 Example 8A : January 1998 8B : February 1998 8L : December 1998 |
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