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STGP5H60DF Datasheet(PDF) 1 Page - STMicroelectronics |
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STGP5H60DF Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 30 page This is information on a product in full production. May 2015 DocID027233 Rev 3 1/30 STGB5H60DF, STGD5H60DF, STGF5H60DF, STGP5H60DF Trench gate field-stop IGBT, H series 600 V, 5 A high speed Datasheet - production data Figure 1. Internal schematic diagram Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Description These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. C (2, TAB) E (3) G (1) Table 1. Device summary Order codes Marking Packages Packing STGB5H60DF GB5H60DF D²PAK Tape and reel STGD5H60DF GD5H60DF DPAK Tape and reel STGF5H60DF GF5H60DF TO-220FP Tube STGP5H60DF GP5H60DF TO-220 Tube www.st.com |
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