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STGP30V60F Datasheet(PDF) 8 Page - STMicroelectronics |
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STGP30V60F Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 19 page  Electrical characteristics STGB30V60F, STGP30V60F 8/19 DocID025049 Rev 4 Figure 14. Switching losses vs. junction temperature Figure 15. Switching losses vs. collector emitter voltage Figure 16. Switching times vs. collector current Figure 17. Switching times vs. gate resistance Figure 18. Transfer characteristics Figure 19. Safe operating area E(μJ) 25 TJ(°C) 200 50 75 100 300 100 125 VCC=400V, VGE=15V IC=30A, Rg=10Ω 400 500 600 Eon Eoff 150 0 700 800 AM17425v1 E(μJ) 150 VCE(V) 500 200 250 100 900 300 350 VGE=15V, Tj=175°C IC=30A, Rg=10Ω Eon Eoff 300 700 1100 400 450 AM17426v1 t(ns) 0 IC(A) 10 20 10 30 40 VCC=400V, Tj=175°C, VGE=15V Rg=10Ω tdoff tdon 100 tf tr 50 60 AM17427v1 t(ns) 0 Rg(Ω) 10 20 10 30 40 VCC=400V, Tj=175°C, VGE=15V IC=30A tdoff tdon 100 tr tf 1000 AM17428v1 IC 80 60 20 0 7 (A) 8 VGE(V) 40 Tj=175°C Tj=25°C Tj=-40°C 9 100 10 11 VCE = 10 V AM17417v1 IC 100 10 0.1 0.01 1 (A) 10 VCE(V) 1 10μs 100μs 1ms 100 Single pulse, Tc=25°C Tj<175°C, VGE=15V AM17416v1 |
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