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STGF19NC60SD Datasheet(PDF) 4 Page - STMicroelectronics |
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STGF19NC60SD Datasheet(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STGF19NC60SD, STGP19NC60SD 4/15 Doc ID 13689 Rev 4 2 Electrical characteristics (Tj = 25°C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE= 0) IC= 1mA 600 V VCE(sat) Collector-emitter saturation voltage VGE= 15V, IC= 12A VGE= 15V, IC=12A,Tj =125°C 1.55 1.35 1.9 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 4.2 6.2 V ICES Collector cut-off current (VGE = 0) VCE= 600 V VCE= 600 V, Tj =125°C 150 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA gfs Forward transconductance VCE = 15V, IC= 12A 10 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1MHz, VGE = 0 - 1190 135 28.5 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 480V, IC = 12A, VGE = 15V, Figure 20 - 54.5 8.7 25.8 - nC nC nC |
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