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STGW30V60F Datasheet(PDF) 8 Page - STMicroelectronics |
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STGW30V60F Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 19 page Electrical characteristics STGFW30V60F, STGW30V60F, STGWT30V60F 8/19 DocID025005 Rev 4 Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage Figure 16. Switching losses vs. collector current Figure 17. Switching losses vs. gate resistance Figure 18. Switching losses vs. junction temperature Figure 19. Switching losses vs. collector emitter voltage C(pF) 10 0.1 VCE(V) 1000 1 10 100 10000 Cies Coes Cres AM17421v1 VGE(V) 0 0 Qg(nC) 50 100 2 150 175 4 6 8 10 12 14 16 25 125 75 VCC = 480 V IC = 30 A AM17422v1 E(μJ) 0 0 IC(A) 400 10 20 200 600 30 40 VCC=400V, VGE=15V Rg=10Ω, Tj=175°C 800 1000 1200 1400 Eon Eoff 50 60 1600 1800 2000 AM17423v1 E(μJ) 0 Rg(Ω) 400 10 20 200 600 30 40 VCC=400V, VGE=15V IC=30A, Tj=175°C 800 1000 1200 Eon Eoff AM17424v1 E(μJ) 25 TJ(°C) 200 50 75 100 300 100 125 VCC=400V, VGE=15V IC=30A, Rg=10Ω 400 500 600 Eon Eoff 150 0 700 800 AM17425v1 E(μJ) 150 VCE(V) 500 200 250 100 900 300 350 VGE=15V, Tj=175°C IC=30A, Rg=10Ω Eon Eoff 300 700 1100 400 450 AM17426v1 |
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