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STGW20IH125DF Datasheet(PDF) 8 Page - STMicroelectronics |
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STGW20IH125DF Datasheet(HTML) 8 Page - STMicroelectronics |
8 / 17 page Electrical characteristics STGW20IH125DF, STGWT20IH125DF 8/17 DocID025269 Rev 2 Figure 14. Gate charge vs. gate-emitter voltage Figure 15. Switching loss vs collector current VGE 8 0 Qg(n C) (V) 0 20 IC= 15A IGE= 1mA VCC= 960V 4 40 12 60 16 GIPD171220130851FSR Eoff 0 IC(A) (μJ) 010 20 400 30 800 TJ = 25°C 1200 VCC = 600V, VGE = 15V, RG = 10Ω TJ = 175°C 1600 GIPD171220130858FSR Figure 16. Switching-off loss vs gate resistance Figure 17. Switching-off loss vs temperature Eoff 200 RG(Ω) (μJ) 010 20 400 600 800 30 40 1000 TJ = 175 °C VCC = 600V, VGE = 15V, IC = 15A TJ = 25 °C GIPD171220130941FSR Eoff 200 TJ( °C) (μJ) 25 50 75 400 600 800 100 150 VCC= 600V, VGE= 15V, RG= 10Ω, IC= 15A 125 GIPD171220130947FSR Figure 18. Switching-off loss vs collector- emitter voltage Figure 19. Switching times vs. collector current Eoff 0 VCE( V) (μJ) 450 200 400 600 VGE= 15V, RG= 10Ω, IC= 15A 800 1000 250 650 850 1200 TJ= 175°C TJ= 25°C GIPD171220130956FSR t IC( A) (ns) 05 10 10 15 tf TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 600V tdoff 100 20 25 30 GIPD171220131002FSR |
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