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STGW50HF60SD Datasheet(PDF) 6 Page - STMicroelectronics |
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STGW50HF60SD Datasheet(HTML) 6 Page - STMicroelectronics |
6 / 13 page Electrical characteristics STGW50HF60SD 6/13 Doc ID 16818 Rev 2 Figure 8. Gate charge vs gate-emitter voltage Figure 9. Capacitance variations Figure 10. Switching losses vs collector current Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs temperature Figure 13. Turn-off SOA VGE 12 8 4 0 0 40 Qg(nC) (V) 160 16 80 120 VCC=480V IC=30A 200 AM08881v1 C 1000 100 10 0.1 10 VCE(V) (pF) 1 100 Cies Coes Cres f=1MHz VGE=0 AM08882v1 E 100 5 15 IC(A) (µJ) 10 20 1000 Eon Eoff 25 VCC=400V, RG=10 Ω VGE=15V, TJ=125°C AM08883v1 E 100 0 40 RG( Ω) (µJ) 20 60 1000 Eon Eoff 80 VCC=400V, IC=30A VGE=15V, TJ=125°C AM08884v1 E 100 25 75 TJ(°C) (µJ) 50 100 1000 Eon Eoff VCC=400V, IC=30A VGE=15V, RG=10 Ω AM08885v1 IC 10 1 0.1 0.01 0.1 1 100 VCE(V) 10 (A) RG=10Ω VGE=15V TJ=150°C AM08886v1 |
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