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STP105N3LL Datasheet(PDF) 1 Page - STMicroelectronics |
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STP105N3LL Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 13 page This is information on a product in full production. April 2014 DocID023976 Rev 2 1/13 STP105N3LL N-channel 30 V, 2.7 m Ω typ., 150 A, STripFET™ VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet − production data Figure 1. Internal schematic diagram Features • R DS(on) * Q g industry benchmark • Extremely low on-resistance R DS(on) • High avalanche ruggedness • Low gate drive power losses Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the 6 th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. TO-220 1 2 3 TAB Order code VDS RDS(on) max. ID STP105N3LL 30 V 3.5 m Ω 150 A Table 1. Device summary Order code Marking Packages Packaging STP105N3LL 105N3LL TO-220 Tube www.st.com |
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