NDD03N80Z

http://onsemi.com

2

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

NDD03N80Z

1.3

°C/W

Junction−to−Ambient Steady State

(Note 3) NDD03N80Z

(Note 2) NDD03N80Z−1

33

96

2. Insertion mounted

3. Surface mounted on FR4 board using 1” sq. pad size (Cu area = 1.127” sq [2 oz] including traces).

Characteristic

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

800

V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

870

mV/°C

Drain−to−Source Leakage Current

1.0

mA

50

Gate-to-Source Leakage Current

±10

mA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

3.0

4.1

4.5

V

Negative Threshold Temperature

Coefficient

11

mV/°C

Static Drain-to-Source On Resistance

3.7

4.5

W

Forward Transconductance

2.1

S

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 5)

440

pF

Output Capacitance (Note 5)

52

Reverse Transfer Capacitance

(Note 5)

9.0

Total Gate Charge (Note 5)

17

nC

Gate-to-Source Charge (Note 5)

3.5

Gate-to-Drain (“Miller”) Charge

(Note 5)

9.1

Plateau Voltage

6.5

V

Gate Resistance

5.5

W

RESISTIVE SWITCHING CHARACTERISTICS (Note 6)

Turn-on Delay Time

9.0

ns

Rise Time

7.0

Turn-off Delay Time

17

Fall Time

9.0

SOURCE−DRAIN DIODE CHARACTERISTICS

Diode Forward Voltage

0.9

1.6

V

0.8

Reverse Recovery Time

360

ns

Charge Time

81

Discharge Time

280

Reverse Recovery Charge

1.3

mC

4. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

5. Guaranteed by design.

6. Switching characteristics are independent of operating junction temperatures.