© Semiconductor Components Industries, LLC, 2015

January, 2015 − Rev. 8

1

Publication Order Number:

NDF06N60Z/D

NDF06N60Z

N-Channel Power MOSFET

600 V, 1.2 W

Features

Compliant

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

600

V

7.1

A

Continuous Drain Current

4.5

A

Pulsed Drain Current,

28

A

35

W

Gate−to−Source Voltage

±30

V

Single Pulse Avalanche Energy, L = 6.3 mH,

113

mJ

ESD (HBM) (JESD22−A114)

3000

V

RMS Isolation Voltage

(t = 0.3 sec., R.H. ≤ 30%,

4500

V

Peak Diode Recovery (Note 2)

dv/dt

4.5

V/ns

MOSFET dV/dt

dV/dt

60

V/ns

Continuous Source Current (Body Diode)

6.0

A

Maximum Temperature for Soldering Leads

260

°C

Operating Junction and

Storage Temperature Range

−55 to

150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Limited by maximum junction temperature

N−Channel

www.onsemi.com

650 V

1.2 Ω

G (1)

D (2)

S (3)

See detailed ordering, marking and shipping information on

page 6 of this data sheet.

ORDERING AND MARKING INFORMATION

NDF06N60ZG,

NDF06N60ZH

TO−220FP

CASE 221AH

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