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NDTL03N150C Datasheet(PDF) 2 Page - ON Semiconductor |
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NDTL03N150C Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page NDTL03N150C www.onsemi.com 2 Fig. 1 Unclamped Inductive Switching Test Circuit Fig. 2 Switching Time Test Circuit Fig. 3 Reverse Recovery Time Test Circuit ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 5, 6, 7) Parameter Symbol Conditions Value Unit min typ max Drain to Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 1500 V Zero-Gate Voltage Drain Current IDSS VDS=1200V, VGS=0V 1 mA Gate to Source Leakage Current IGSS VGS=30V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS=10V, ID=1mA 2 4 V Forward Transconductance gFS VDS=20V, ID=1.25A 1.9 S Static Drain to Source On-State Resistance RDS(on) ID=1.25A, VGS=10V 8 10.5 Ω Input Capacitance Ciss VDS=30V, f=1MHz 650 pF Output Capacitance Coss 70 pF Reverse Transfer Capacitance Crss 20 pF Turn-ON Delay Time td(on) See Fig.2 15 ns Rise Time tr 24 ns Turn-OFF Delay Time td(off) 140 ns Fall Time tf 47 ns Total Gate Charge Qg VDS=200V, VGS=10V, ID=2.5A 34 nC Gate to Source Charge Qgs 4.7 nC Gate to Drain “Miller” Charge Qgd 15 nC Forward Diode Voltage VSD IS=2.5A, VGS=0V 0.8 1.5 V Reverse Recovery Time trr See Fig.3 IS=2.5A, VGS=0V, di/dt=100A/μs 350 ns Reverse Recovery Charge Qrr 2220 nC Effective Output Capacitance, Energy Related (Note 6) Co(er) VGS=0V, VDS=0 to 1200V 18.3 pF Effective Output Capacitance, Time Related (Note 7) Co(tr) 29.6 pF Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. Note 7 : Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. |
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