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NDTL03N150C Datasheet(PDF) 2 Page - ON Semiconductor

Part # NDTL03N150C
Description  Power MOSFET
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NDTL03N150C Datasheet(HTML) 2 Page - ON Semiconductor

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NDTL03N150C
www.onsemi.com
2
Fig. 1 Unclamped Inductive Switching Test Circuit
Fig. 2 Switching Time Test Circuit
Fig. 3 Reverse Recovery Time Test Circuit
ELECTRICAL CHARACTERISTICS at Ta
= 25°C (Note 5, 6, 7)
Parameter
Symbol
Conditions
Value
Unit
min
typ
max
Drain to Source Breakdown Voltage
V(BR)DSS
ID=10mA, VGS=0V
1500
V
Zero-Gate Voltage Drain Current
IDSS
VDS=1200V, VGS=0V
1
mA
Gate to Source Leakage Current
IGSS
VGS=30V, VDS=0V
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=10V, ID=1mA
2
4
V
Forward Transconductance
gFS
VDS=20V, ID=1.25A
1.9
S
Static Drain to Source On-State
Resistance
RDS(on)
ID=1.25A, VGS=10V
8
10.5
Ω
Input Capacitance
Ciss
VDS=30V, f=1MHz
650
pF
Output Capacitance
Coss
70
pF
Reverse Transfer Capacitance
Crss
20
pF
Turn-ON Delay Time
td(on)
See Fig.2
15
ns
Rise Time
tr
24
ns
Turn-OFF Delay Time
td(off)
140
ns
Fall Time
tf
47
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=2.5A
34
nC
Gate to Source Charge
Qgs
4.7
nC
Gate to Drain “Miller” Charge
Qgd
15
nC
Forward Diode Voltage
VSD
IS=2.5A, VGS=0V
0.8
1.5
V
Reverse Recovery Time
trr
See Fig.3
IS=2.5A, VGS=0V, di/dt=100A/μs
350
ns
Reverse Recovery Charge
Qrr
2220
nC
Effective Output Capacitance,
Energy Related (Note 6)
Co(er)
VGS=0V, VDS=0 to 1200V
18.3
pF
Effective Output Capacitance,
Time Related (Note 7)
Co(tr)
29.6
pF
Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS.
Note 7 : Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS.


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