NTA4001N_11 datasheet(3/5 Pages) ONSEMI

Part #	NTA4001N

Description	Small Signal MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NTA4001N, NVA4001N

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3

TYPICAL PERFORMANCE CURVES

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

0.2

0

0.4

0.8

1.2

1.6

2

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−region Characteristics

VGS = 10 V

VGS = 5 V

VGS = 2.8 V

VGS = 2 V

VGS = 2.4 V

VGS = 1.4 V

VGS = 1.2 V

.

TJ = 25°C

0

0.04

0.08

0.12

0.16

0.2

0.6

0.8

1

1.2

1.4

1.6

1.8

2

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

TJ = 25°C

TJ = −55°C

TJ = 125°C

VDS = 5 V

0.5

1

1.5

2

2.5

0

0.05

0.1

0.15

0.2

ID, DRAIN CURRENT (A)

Figure 3. On−resistance versus Drain Current

and Temperature

VGS = 4.5 V

TJ = 125°C

TJ = 25°C

TJ = −55°C

0.5

1

1.5

2

2.5

0

0.05

0.1

0.15

0.2

ID, DRAIN CURRENT (A)

Figure 4. On−resistance versus Drain Current

and Gate Voltage

VGS = 2.5 V

VGS = 4.5 V

TJ = 25°C

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

−50

−25

0

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−resistance Variation with

Temperature

ID = 0.01 A

VGS = 4.5 V

0

5

10

15

20

1

10

100

1000

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

TJ = 125°C

TJ = 150°C

VGS = 0 V

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