Radar Pulsed Power Transistor

3W, 1.2-1.4 GHz, 2ms Pulse, 20% Duty

Rev. V1

PH1214-3L

1

1

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1

Features

 NPN silicon microwave power transistors

 Common base configuration

 Broadband Class C operation

 High efficiency inter-digitized geometry

 Diffused emitter ballasting resistors

 Gold metallization system

 Internal input and output impedance matching

 Hermetic metal/ceramic package

 RoHS compliant

Parameter

Test Conditions

Frequency

Symbol

Min

Max

Units

50

-

V

Collector-Emitter Leakage Current

-

2.0

mA

Thermal Resistance

Vcc = 16.5V, Pin = 0.8W

F = 1.2, 1.3, 1.4 GHz

-

9.4

°C/W

Output Power

Vcc = 16.5V, Pin = 0.8W

F = 1.2, 1.3, 1.4 GHz

-

3.0

W

Power Gain

Vcc = 16.5V, Pin = 0.8W

F = 1.2, 1.3, 1.4 GHz

5.7

-

dB

Collector Efficiency

Vcc = 16.5V, Pin = 0.8W

F = 1.2, 1.3, 1.4 GHz



C

40

-

%

Input Return Loss

Vcc = 16.5V, Pin = 0.8W

F = 1.2, 1.3, 1.4 GHz

RL

-

-9

dB

Load Mismatch Tolerance

Vcc = 16.5V, Pin = 0.8W

F = 1.2, 1.3, 1.4 GHz

VSWR-T

-

2:1

-

Load Mismatch Stability

Vcc = 16.5V, Pin = 0.8W

F = 1.2, 1.3, 1.4 GHz

VSWR-S

-

1.5:1

-

Absolute Maximum Ratings at 25°C

Parameter

Symbol

Rating

Units

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

3.5

V

Collector Current (Peak)

1.1

A

Power Dissipation @ +25°C

18.6

W

Storage Temperature

-65 to +200

°C

Junction Temperature

200

°C

Outline Drawing