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TN2540-800G-TR Datasheet(PDF) 2 Page - STMicroelectronics |
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TN2540-800G-TR Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 11 page  Characteristics TN2540, TXN625, TYN625, TYN825, TYN1225 2/11 DocID7478 Rev 9 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit IT(RMS) On-state rms current (180 °Conduction angle) TO-220AB, D2PAK Tc = 100 °C 25 A TO-220AB ins Tc = 83 °C IT(AV) Average on-state current (180 °Conduction angle) Tc = 100 °C 16 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25 °C 314 A tp = 10 ms 300 I2tI2t Value for fusing tp = 10 ms Tj = 25 °C 450 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj = 125 °C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125 °C 4 A PG(AV) Average gate power dissipation Tj = 125 °C 1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage 5 V Table 3. Electrical Characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Value Unit IGT VD = 12 V RL = 33 Ω MIN. 4 mA MAX. 40 VGT MAX. 1.3 V VGD VD = VDRM RL = 3.3 kΩ Tj = 125 °C MIN. 0.2 V IH IT = 500 mA Gate open MAX. 50 mA IL IG = 1.2 x IGT MAX. 90 mA dV/dt VD = 67% VDRM Gate open Tj = 125 °C MIN. 1500 V/µs VTM ITM = 50 A tp = 380 µs Tj = 25 °C MAX. 1.6 V Vt0 Threshold voltage Tj = 125 °C MAX. 0.77 V Rd Dynamic resistance Tj = 125 °C MAX. 14 m Ω IDRM IRRM VDRM = VRRM Tj = 25 °C MAX. 5µA Tj = 125 °C 4 mA |
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