1

Publication Order Number :

EFC8811R/D

www.onsemi.com

© Semiconductor Components Industries, LLC, 2016

March 2016 - Rev. 0

EFC8811R

Power MOSFET

for 1-Cell Lithium-ion Battery Protection

12V, 3.2mΩ, 27A, Dual N-Channel

This Power MOSFET features a low on-state resistance. This device is

suitable for applications such as power switches of portable machines. Best

suited for 1-cell lithium-ion battery applications.

Features

 2.5V drive

 2kV ESD HBM

 Common-Drain Type

 ESD Diode-Protected Gate

 Pb-Free, Halogen Free and RoHS compliance

Applications

 1-Cell Lithium-ion Battery Charging and Discharging Switch

SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS at Ta = 25

Parameter

Symbol

Value

Unit

Source to Source Voltage

VSSS

12

V

Gate to Source Voltage

VGSS

8

V

Source Current (DC)

IS

27

A

Source Current (Pulse)

PW

100s, duty cycle1%

ISP

100

A

Total Dissipation

Surface mounted on ceramic substrate

(5000mm

PT

2.5

W

Junction Temperature

Tj

150

C

Storage Temperature

Tstg

55 to +150

C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Value

Unit

Junction to Ambient

Surface mounted on ceramic substrate

(5000mm

RJA

50

C/W

ELECTRICAL CONNECTION

N-Channel

ML

LOT No.

ORDERING INFORMATION

See detailed ordering and shipping

information on page 6 of this data sheet.

VSSS

RSS(on) Max

IS Max

12V

3.2mΩ@ 4.5V

27A

3.2mΩ@ 4.0V

3.2mΩ@ 3.8V

4.4mΩ@ 3.1V

6.3mΩ@ 2.5V

MARKING

CSP6, 1.77x3.54 /

EFCP3517-6DGH-020

4, 6

1, 3

5

2

Rg=200

Ω

Rg

Rg

1 : Source1

2 : Gate1

3 : Source1

4 : Source2

5 : Gate2

6 : Source2