Transistors with built-in Resistor

1

Publication date: December 2003

SJH00020BED

Silicon NPN epitaxial planar type

For digital circuits

■ Features

• Costs can be reduced through downsizing of the equipment and

reduction of the number of parts

• New S type package, allowing supply with the radial taping

■ Resistance by Part Number

• UNR4210 (UN4210)

47 k

Ω

• UNR4211 (UN4211)

10 k

Ω

10 k

Ω

• UNR4212 (UN4212)

22 k

Ω

22 k

Ω

• UNR4213 (UN4213)

47 k

Ω

47 k

Ω

• UNR4214 (UN4214)

10 k

Ω

47 k

Ω

• UNR4215 (UN4215)

10 k

Ω

• UNR4216 (UN4216)

4.7 k

Ω

• UNR4217 (UN4217)

22 k

Ω

• UNR4218 (UN4218)

0.51 k

Ω

5.1 k

Ω

• UNR4219 (UN4219)

1 k

Ω

10 k

Ω

• UNR421D (UN421D)

47 k

Ω

10 k

Ω

• UNR421E (UN421E)

47 k

Ω

22 k

Ω

• UNR421F (UN421F)

4.7 k

Ω

10 k

Ω

• UNR421K (UN421K)

10 k

Ω

4.7 k

Ω

• UNR421L (UN421L)

4.7 k

Ω

4.7 k

Ω

■ Absolute Maximum Ratings T

a

= 25°C

Note) The part numbers in the parenthesis show conventional part number.

Internal Connection

Unit: mm

1: Emitter

2: Collector

3: Base

NS-B1 Package

0.75 max.

0.45

(2.5) (2.5)

23

1

+0.20

–0.10

0.45

+0.20

–0.10

B

C

E

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

50

V

Collector-emitter voltage (Base open)

50

V

Collector current

100

mA

Total power dissipation

300

mW

Junction temperature

150

°C

Storage temperature

−55 to +150

°C