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THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

1617AB15

15 Watts PEP, 26 Volts, Class AB

Linear 1600 - 1700 MHz

GENERAL DESCRIPTION

The 1617AB15 is a COMMON EMITTER transistor capable of providing

15 Watts PEP of Class AB, RF output power over the band 1600 - 1700 MHz.

This transistor is specifically designed for SATCOM BASE STATION

amplifier applications. It includes Input prematching and utilizes Gold

metalization and HIGH VALUE EMITTER ballasting to provide high

reliability and supreme ruggedness.

CASE OUTLINE

55CW

COMMON EMITTER

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation @ 25 C

58 Watts

o

Maximum Voltage and Current

BVces

Collector to Emitter Voltage

60 Volts

LVceo

Collector to Emitter Voltage

27 Volts

BVebo

Emitter to Base Voltage

3.5 Volts

Ic

Collector Current

6.0 Amps

Maximum Temperatures

Storage Temperature

- 65 to + 150 C

o

Operating Junction Temperature

+ 200 C

o

ELECTRICAL CHARACTERISTICS @ 25 C

O

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

P-1dB

Pg

IMD

3

VSWR

Power Out 1 dB comp pt.

Power Gain

Intermod. distortion -3rd

Load Mismatch Tolerance

F =1700 MHz

Icq = 100 mAmpsVcc= 26V

15 W PEP, Two Tone

15

10.0

12

-32

6:1

Watt

dB

dBc

BVces

LVceo

BVebo

Ices

h

FE

Cob

Collector to Emitter Breakdown

Collector to EmitterBreakdown

Emitter to Base Breakdown

Collector Leakage Current

DC - Current Gain

Output Capacitance

Thermal Resistance

Ic = 50 mA

Ic = 50 mA

Ie = 10 mA

Vce = 26 Volts

Vce = 5 V, Ic =0.5 A

F =1 MHz, Vcb = 28 V

Tc = 25 C

o

60

27

3.5

20

20

10

100

3.0

Volts

Volts

Volts

mA

pF

C/W

o

Issue February 1996