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TPS23756PWPR Datasheet(PDF) 4 Page - Texas Instruments |
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TPS23756PWPR Datasheet(HTML) 4 Page - Texas Instruments |
4 / 45 page TPS23754, TPS23754-1, TPS23756 SLVS885H – OCTOBER 2008 – REVISED OCTOBER 2015 www.ti.com Pin Functions (continued) PIN TPS23754 TYPE DESCRIPTION NAME and TPS23754-1 TPS23756 5.1-V bias rail for DC-DC control circuits and the feedback optocoupler. Typically VB 2 2 O bypass with a 0.1 μF to ARTN. DC-DC converter bias voltage. Connect a 0.47 μF (minimum) ceramic capacitor to VC 6 6 I/O ARTN at the pin, and a larger capacitor to power start-up. Connect to the positive PoE input power rail. VDD powers the PoE interface circuits. VDD 12 12 I Bypass with a 0.1- μF capacitor and protect with a TVS. VDD1 11 11 I Source of DC-DC converter start-up current. Connect to VDD for many applications. VSS 10 10 — Connect to the negative power rail derived from the PoE source. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2). Voltage with respect to V SS unless otherwise noted. MIN MAX UNIT ARTN(2), COM(2), DEN, PPD, RTN(3), VDD, VDD1 –0.3 100 CLS(4) –0.3 6.5 [APD, BLNK(4), CTL, DT(4), FRS(4), VB(4)] Input voltage –0.3 6.5 V to [ARTN, COM] CS to [ARTN,COM] –0.3 VB [ARTN, COM] to RTN –2 2 VC, T2P, to [ARTN, COM] –0.3 19 Voltage V GATE(4), GAT2(4) to [ARTN, COM] –0.3 VC+ 0.3 Sinking current RTN Internally limited mA Sourcing current VB Internally limited mA Average Sourcing GATE, GAT2 25 mArms or sinking current Maximum junction temperature, TJ(MAX) Internally limited °C Storage temperature, Tstg –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) ARTN and COM must be tied to RTN. (3) IRTN = 0 for VRTN > 80 V. (4) Do not apply voltage to these pins 6.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) 2000 Electrostatic V(ESD) Charged-device model (CDM), per JEDEC specification JESD22-C101(2) 500 V discharge System level (contact/air) at RJ-45(3) 8000 / 15000 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. (3) ESD per EN61000-4-2. A power supply containing the TPS23754 was subjected to the highest test levels in the standard. See the ESD section. 4 Submit Documentation Feedback Copyright © 2008–2015, Texas Instruments Incorporated Product Folder Links: TPS23754 TPS23754-1 TPS23756 |
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