2

Symbol

Parameter

Units

Absolute Max.

Vdd

Device Voltage

V

4

Control Voltage

V

(Vdd-0.3)

CW RF Input Power

dBm

+15

mW

80

Junction Temperature

°C

150

Storage Temperature

°C

-65 to 150

Notes:

4. Distribution data sample size are 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have

nominal values anywhere between the upper and lower limits.

Notes:

1. Operation of this device in excess of any of

these limits may cause permanent damage.

2. Thermal resistance measured using Infra-

Red Measurement Technique.

°C derate the device power at 14mW per °C

rise in Board (package belly) temperature.

Figure 1. Gain @ 2.4 GHz , Vd 3V; Vbypass 1.8 V,

LSL=13.5, Nominal=15.0, USL=16.5

Figure 2. NF @ 2.4 GHz , Vd 3V; Vbypass 1.8 V,

Nominal=1.1, USL=1.5

Figure 3. Ids @ 2.4 GHz , Vd 3V; Vbypass 1.8 V,

Nominal=7.0, USL=13.0

specified.

Symbol

Parameter and Test Condition

Units

Min.

Typ.

Max.

Id

Bias Current

mA

-

7

13

Gain

Gain

dB

13.5

15

16.5

NF

Noise Figure (Typ.Vbypass=1.8V)

dB

-

1.1

1.5

Input Third Order Intercept Point

dBm

-

+7

-

OP1dB

Output Power at 1dB Gain Compression

dBm

-

+9

-

S11

Input Return Loss, 50Ω source

dB

-

-9

-

S22

Output Return Loss, 50Ω load

dB

-

-15

-

S12

Reverse Isolation

dB

-

-27

-

Bypass Mode Loss (Vbypass = 0)

dB

-

-4.5

-

Bypass Mode IIP3 (tested at -20dBm input Power)

dBm

-

16

-

Bypass Mode current

uA

-

80

-

Notes:

5. Measurements at 2.4GHz obtained using demo board described in Figure 1, with component values on Figure 2 (2.3 – 2.4 GHz)

7. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application

note for more details.