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DEMO-MGA-43128 Datasheet(PDF) 2 Page - Broadcom Corporation. |
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DEMO-MGA-43128 Datasheet(HTML) 2 Page - Broadcom Corporation. |
2 / 24 page 2 MGA-43128 Absolute Maximum Rating [1] TA = 25° C Symbol Parameter Units Absolute Maximum Vdd, Vbias Supply Voltages, Bias Supply Voltage V 6.0 Vc Control Voltage V (Vdd) Pin,max CW RF Input Power dBm 20 Pdiss Total Power Dissipation [3] W 7.0 Tj Junction Temperature °C 150 TSTG Storage Temperature °C -65 to 150 Thermal Resistance Thermal Resistance [2] jc = 13.5°C/W Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using Infra- Red Measurement Technique. 3. Board temperature (Tc) is 25° C. For Tc >55.5° C, derate the device power at 74.1 mW per °C rise in board temperature adjacent to package bottom. Electrical Specifications TA = 25° C, Vdd = Vbias = 5.0 V, Vc1 = 2.8 V, Vc2 = 2.4 V, Vbyp = 0 V, Iqtotal = 370 mA, RF performance at 750 MHz, LTE 3GPP. TS 36.104, 10 MHz bandwidth OFDMA operation unless otherwise stated. Symbol Parameter and Test Condition Units Min. Typ. Max. Vdd Supply Voltage 5.0 Iqtotal Quiescent Supply Current (normal high gain mode) mA 370 Quiescent Supply Current (low gain mode, Vbyp = 5.0 V) mA 370 Gain Gain dB 31.5 33.4 OP1dB Output Power at 1 dB Gain Compression dBm 36 Pout_linear Linear Output power with 3GPP LTE v8.6.0 (March 2009), 10 MHz bandwidth OFDMA @ 2.5% EVM dBm 27.6 29.1 Itotal_linear Total current draw at Pout_linear level mA 780 1000 S11 Input Return Loss, 50 source dB -20 S22 Output Return Loss, 50 load dB -7 S12 Reverse Isolation dB 50 2 Fc Second harmonic attenuation @ Pin = -20 dBm dBc 60 Atten Gain attenuation in low gain mode (Vbyp = 5.0 V) dB 14.5 18 21.5 Vdet Detector output DC voltage @ 29 dBm linear Pout V 3.3 DetR Detector RF dynamic range dB 17 S Stability under load VSWR of 6:1 (all phase angle), spurious output dBc -60 |
Similar Part No. - DEMO-MGA-43128 |
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Similar Description - DEMO-MGA-43128 |
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