IDT5V41315

2 OUTPUT PCIE GEN1-2-3 SYNTHESIZER

IDT® 2 OUTPUT PCIE GEN1-2-3 SYNTHESIZER

3

IDT5V41315

MAY 8, 2017

Absolute Maximum Ratings

Stresses above the ratings listed below can cause permanent damage to the IDT5V41315. These ratings are stress ratings

only. Functional operation of the device at these or any other conditions above those indicated in the operational sections of

the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods can affect product

reliability. Electrical parameters are guaranteed only over the recommended operating temperature range.

DC Electrical Characteristics

1. Single edge is monotonic when transitioning through region.

2. Inputs with pull-ups/-downs are not included.

Item

Rating

Supply Voltage, VDDXD, VDDODA

4.6 V

All Inputs and Outputs

-0.5 V to VDD+0.5 V

Storage Temperature

-65 to +150

C

Junction Temperature

125

C

Soldering Temperature

260

C

ESD Protection (Input)

2000 V min. (HBM)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Units

Supply Voltage

V

3.135

3.3

3.465

V

Ambient Operating

Temperature

-40

+25

+85

°C

S0, S1, OE, ICLK

2.2

VDD +0.3

V

S0, S1, OE, ICLK

VSS-0.3

0.8

V

0 < Vin < VDD

-5

5

A

Operating Supply Current

@100 MHz

63

85

mA

OE =Low

42

50

mA

Input Capacitance

Input pin capacitance

7

pF

Output Capacitance

Output pin capacitance

6

pF

X1, X2 Capacitance

5pF

Pin Inductance

5nH

Output Impedance

CLK outputs

3.0

k



Pull-up Resistor

S0, S1, OE

100

k

