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HAL320 Datasheet(PDF) 6 Page - List of Unclassifed Manufacturers |
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HAL320 Datasheet(HTML) 6 Page - List of Unclassifed Manufacturers |
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6 / 13 page  HAL320 6 Micronas Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions Typical Characteristics for TJ = 25 °C and VDD = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions IDD Supply Current 1 2.8 4.7 6.8 mA TJ = 25 °C IDD Supply Current over Temperature Range 1 1.8 4.7 7.5 mA VDDZ Overvoltage Protection at Supply 1 – 28.5 32.5 V IDD = 25 mA, TJ = 25 °C, t = 20 ms VOZ Overvoltage Protection at Output 3 – 28 32.5 V IOH = 25 mA, TJ = 25 °C, t = 20 ms VOL Output Voltage 3 – 170 250 mV VDD = 12 V, IO = 20 mA, TJ = 25 °C VOL Output Voltage over Temperature Range 3 – 170 400 mV IO = 20 mA VOL Output Voltage over Temperature Range 3 – 210 500 mV IO = 25 mA IOH Output Leakage Current 3 – – 1 µA VOH = 4.5 V... 24 V, DB < DBOFF, TJ = 25 °C IOH Output Leakage Current over Temperature Range 3 – – 10 µA VOH = 4.5 V... 24 V, DB < DBOFF, TJ ≤ 150 °C fosc Internal Oscillator Chopper Frequency – 42 62 75 kHz TJ = 25 °C fosc Internal Oscillator Chopper Fre- quency over Temperature Range – 40 62 80 kHz ten(O) Enable Time of Output after Setting of VDD 3 – 35 – µs VDD = 12 V, DB > DBON + 2mT or DB < DBOFF – 2mT tr Output Rise Time 3 – 80 400 ns VDD = 12 V, RL = 820 Ω, CL = 20 pF tf Output Fall Time 3 – 50 400 ns VDD = 12 V, RL = 820 Ω, CL = 20 pF RthJSB case SOT-89A, SOT-89B Thermal Resistance Junction to Substrate Backside – 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 8 RthJS case TO-92UA Thermal Resistance Junction to Soldering Point – 150 200 K/W |
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