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AS4C256M8D3L-12BIN Datasheet(PDF) 2 Page - Alliance Semiconductor Corporation

Part # AS4C256M8D3L-12BIN
Description  Bidirectional differential data strobe
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C256M8D3L-12BIN Datasheet(HTML) 2 Page - Alliance Semiconductor Corporation

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2Gb DDR3L - AS4C256M8D3L
Confidential
2
Rev. 2.0
Aug. /2014
256M x 8 bit DDR3L Synchronous DRAM (SDRAM)
Confidential
Advanced (Rev. 2.0, Aug. /2014)
Features
 JEDEC Standard Compliant
 Power supplies: VDD & VDDQ = +1.35V
 Backward compatible to VDD & VDDQ = 1.5V ±0.075V
 Operating temperature:
- Commercial (Extended) (0 ~ 95°C)
- Industrial (-40 ~ 95°C)
 Supports JEDEC clock jitter specification
 Fully synchronous operation
 Fast clock rate: 800MHz
 Differential Clock, CK & CK#
 Bidirectional differential data strobe
- DQS & DQS#
 8 internal banks for concurrent operation
 8n-bit prefetch architecture
 Internal pipeline architecture
 Precharge & active power down
 Programmable Mode & Extended Mode registers
 Additive Latency (AL): 0, CL-1, CL-2
 Programmable Burst lengths: 4, 8
 Burst type: Sequential / Interleave
 Output Driver Impedance Control
 8192 refresh cycles / 64ms
- Average refresh period
7.8μs @ -40℃ ≦TC≦ +85℃
3.9μs @ +85℃ <TC≦ +95℃
 Write Leveling
 OCD Calibration
 Dynamic ODT (Rtt_Nom & Rtt_WR)
 RoHS compliant
 Auto Refresh and Self Refresh
 78-ball 8 x 10.5 x 1.2mm FBGA package
- Pb and Halogen Free
Overview
The 2Gb Double-Data-Rate-3 (DDR3L) DRAMs is
double data rate architecture to achieve high-speed
operation. It is internally configured as an eight bank
DRAM.
The 2Gb chip is organized as 32Mbit x 8 I/Os x 8 bank
devices. These synchronous devices achieve high
speed double-data-rate transfer rates of up to 1600
Mb/sec/pin for general applications.
The chip is designed to comply with all key DDR3L
DRAM key features and all of the control and address
inputs are synchronized with a pair of externally
supplied differential clocks. Inputs are latched at the
cross point of differential clocks (CK rising and CK#
falling). All I/Os are synchronized with differential DQS
pair in a source synchronous fashion.
These devices operate with a single 1.35V -0.067V/
+0.1V power supply and are available in BGA packages.
Table 1. Speed Grade Information
Speed Grade
Clock Frequency
CAS Latency
tRCD (ns)
tRP (ns)
DDR3L-1600
800 MHz
11
13.75
13.75
Table 2. Ordering Information
Product part No
Org
Temperature
Package
AS4C256M8D3L-12BCN
256M x 8
Commercial (Extended)
0°C to 95°C
78-ball FBGA
AS4C256M8D3L-12BIN
256M x 8
Industrial
-40°C to 95°C (Extended)
78-ball FBGA


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