IRFR/U3303

…

8/25/97

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

2.2

Junction-to-Ambient (PCB mount)**

–––

50

°C/W

Junction-to-Ambient

–––

110

Thermal Resistance

D - P a k

TO - 2 52 A A

I- P a k

TO - 251A A

Description

Parameter

Max.

Units

33

…

21

…

A

Pulsed Drain Current



120

Power Dissipation

57

W

Linear Derating Factor

0.45

W/°C

Gate-to-Source Voltage

± 20

V

Single Pulse Avalanche Energy

‚

95

mJ

Avalanche Current



18

A

Repetitive Avalanche Energy



5.7

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒ

5.0

V/ns

Operating Junction and

-55 to + 150

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

°C

Absolute Maximum Ratings

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

S

D

G

PD - 9.1642A