MDF7N65BTH datasheet(1/6 Pages) MGCHIP

Part #	MDF7N65BTH

Description	N-Channel MOSFET 650V, 7.0A, 1.35(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

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Jun 2011 Version 2.2

MagnaChip Semiconductor Ltd

.

1

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

650

V

Gate-Source Voltage

VGSS

±30

V

Continuous Drain Current

TC=25

oC

ID

7.0*

A

TC=100

oC

4.4*

A

Pulsed Drain Current

(1)

IDM

28*

A

Power Dissipation

TC=25

oC

PD

42

W

Derate above 25

oC

0.33

W/

oC

Repetitive Avalanche Energy

(1)

EAR

13.1

mJ

Peak Diode Recovery dv/dt

(3)

dv/dt

4.5

V/ns

Single Pulse Avalanche Energy

(4)

EAS

212

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

* Id limited by maximum junction temperature

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

(1)

RθJC

3.01

MDF7N65B

N-Channel MOSFET 650V, 7.0A, 1.35

General Description

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.

Features

VDS = 650V

ID = 7.0A

@ VGS = 10V

RDS(ON) ≤ 1.35

@ VGS = 10V

Applications

Power Supply

PFC

High Current, High Speed Switching

D

G

S

TO-220F

MDF Series

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MDF7N65BTH Datasheet(PDF) 1 Page - MagnaChip Semiconductor.

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