MDF13N65B datasheet(2/6 Pages) MGCHIP

Part #	MDF13N65B

Description	N-Channel MOSFET 650V, 14A, 0.46(ohm)

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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2 / 6 page

Jun. 2011 Version 1.3

MagnaChip Semiconductor Ltd.

2

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDF13N65BTH

-55~150

oC

TO-220F

Tube

Halogen Free

Electrical Characteristics (Ta =25

oC)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = 250μA, VGS = 0V

650

-

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250μA

2.0

-

4.0

Drain Cut-Off Current

IDSS

VDS = 600V, VGS = 0V

-

1

μA

Gate Leakage Current

IGSS

VGS = ±30V, VDS = 0V

-

100

nA

Drain-Source ON Resistance

RDS(ON)

VGS = 10V, ID = 7A

0.40

0.46

Ω

Forward Transconductance

gfs

VDS = 30V, ID = 7A

-

3.7

-

S

Dynamic Characteristics

Total Gate Charge

Qg

VDS = 520V, ID = 14.0A, VGS = 10V

(3)

-

54

-

nC

Gate-Source Charge

Qgs

-

13

-

Gate-Drain Charge

Qgd

-

21

-

Input Capacitance

Ciss

VDS = 25V, VGS = 0V, f = 1.0MHz

-

2400

-

pF

Reverse Transfer Capacitance

Crss

-

12.8

-

Output Capacitance

Coss

-

243

-

Turn-On Delay Time

td(on)

VGS = 10V, VDS = 325V, ID = 14.0A,

RG = 25Ω

(3)

-

32

-

nS

Rise Time

tr

-

81

-

Turn-Off Delay Time

td(off)

-

204

-

Fall Time

tf

-

76

-

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to

Source Diode Forward Current

IS

-

14

-

A

Source-Drain Diode Forward Voltage

VSD

IS = 14.0A, VGS = 0V

-

1.4

V

Body Diode Reverse Recovery Time

trr

IF = 14.A, dl/dt = 100A/μs

(3)

-

377

-

nS

Body Diode Reverse Recovery Charge

Qrr

-

8.2

-

μC

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.

3.

ISD ≤7.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C

4. L=7.6mH,

IAS=14.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,

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