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MDHT4N25URH Datasheet(PDF) 3 Page - MagnaChip Semiconductor. |
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MDHT4N25URH Datasheet(HTML) 3 Page - MagnaChip Semiconductor. |
3 / 7 page Mar. 2016 Version 1.1 MagnaChip Semiconductor Ltd. 3 Fig.5 Transfer Characteristics Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 1 2 3 4 5 6 Notes 1. 250㎲ Pulse Test 2. T C=25 ℃ V gs=5.5V =6.0V =6.5V =7.0V =8.0V =10V =15V V DS,Drain-Source Voltage [V] -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = 250㎂ T J, Junction Temperature [ oC] 0 1 2 3 4 5 6 7 8 0 1 2 3 4 V GS=20V V GS=10V I D,Drain Current [A] 2 3 4 5 6 7 8 9 10 0.1 1 10 -55℃ 25℃ 150℃ * Notes ; 1. Vds=30V V GS [V] 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 25℃ 150℃ ※ Notes : 1. V GS = 0 V 2.250s Pulse test V SD, Source-Drain Voltage [V] -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D =0.415A T J, Junction Temperature [ oC] |
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