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AS4C8M16SA-6TCN Datasheet(PDF) 11 Page - Alliance Semiconductor Corporation |
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AS4C8M16SA-6TCN Datasheet(HTML) 11 Page - Alliance Semiconductor Corporation |
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11 / 54 page  AS4C8M16SA Confidential 11 Rev. 2.2 Mar /2014 CLK COMMAND T0 T1 T2 T3 T4 T5 T6 NOP WRITE A READ B NOP NOP NOP NOP NOP T7 T8 NOP CAS# Latency=2 tCK2, DQ CAS# Latency=3 tCK3, DQ DOUT B0 DOUT B1 DOUT B2 DOUT B3 DOUT B0 DOUT B1 DOUT B2 DOUT B3 DIN A0 don’t care DIN A0 don’t care don’t care Input data must be removed from the DQ at least one clock cycle before the Read data appears on the outputs to avoid data contention Figure 12. Write Interrupted by a Read (Burst Length = 4, CAS# Latency = 2, 3) The BankPrecharge/PrechargeAll command that interrupts a write burst without the auto precharge function should be issued m cycles after the clock edge in which the last data-in element is registered, where m equals tWR/tCK rounded up to the next whole number. In addition, the DQM signals must be used to mask input data, starting with the clock edge following the last data-in element and ending with the clock edge on which the BankPrecharge/PrechargeAll command is entered (refer to the following figure). CLK COMMAND T0 T1 T2 T3 T4 T5 T6 WRITE NOP NOP Precharge NOP NOP Activate NOP T7 DQM Don’t Care ADDRESS Bank Col n Bank (s) ROW tRP DIN n DIN N+1 tWR DQ Note: The DQMs can remain low in this example if the length of the write burst is 1 or 2. Figure 13. Write to Precharge 7 Write and AutoPrecharge command (RAS# = "H", CAS# = "L", WE# = "L", BAs = Bank, A10 = "H", A0-A8 = Column Address) The Write and AutoPrecharge command performs the precharge operation automatically after the write operation. Once this command is given, any subsequent command can not occur within a time delay of {(burst length -1) + tWR + tRP (min.)}. At full-page burst, only the write operation is performed in this command and the auto precharge function is ignored. |
Similar Part No. - AS4C8M16SA-6TCN |
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